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MM54C910 Datasheet Random Access Read/Write Memory

Manufacturer: National Semiconductor (now Texas Instruments)

General Description

The MM54C910 MM74C910 is a 64 word by 4-bit random access memory Inputs consist of six address lines four data input lines a WE and a ME line The six address lines are internally decoded to select one of the 64 word locations An internal address register latches the address information on the positive to negative transition of ME The TRI-STATE outputs allow for easy memory expansion Address Operation Address inputs must be stable (tSA) prior to the positive to negative transition of ME and (tHA) after the positive to negative transition of ME The address register holds the information and stable address inputs are not needed at any other time Write Operation Data is written into memory at the selected address if WE goes low while ME is low WE must be held low for tWE and data must remain stable tHD after

Overview

Obsolete MM54C910 MM74C910 256 Bit TRI-STATE Random Access Read Write Memory September 1989 MM54C910 MM74C910 256 Bit TRI-STATE Random Access Read Write Memory.